| PART |
Description |
Maker |
| BF-30-I-A |
Infrarot-Temperatur-Messger?te
|
ASM GmbH
|
| KVR16X72V84-50EG |
Memory Module Specification (EDO Memory Module Kit)
|
Electronic Theatre Controls, Inc.
|
| KVR8X72V84-50EG |
Memory Module Specification (EDO Memory Module)
|
Electronic Theatre Controls, Inc.
|
| BR34E02NUX-WTR |
DDR/DDR2 (For memory module) SPD Memory
|
Rohm
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MCM40100 MCM40100S10 MCM40100S80 MCM40100SG10 MCM4 |
1M x 40 Bit Dynamic Random Access Memory Module 1M X 40 FAST PAGE DRAM MODULE, 80 ns, SMA72
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 1M X 40 FAST PAGE DRAM MODULE, 100 ns, SMA72
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| BP3599 |
Wireless LAN Module with Flash Memory
|
ROHM
|
| SE98ATL SE98ATP SE98APW |
DDR memory module temp sensor, 1.7 V to 3.6 V
|
NXP Semiconductors
|
| IC-176-4-MF IC-176-2-MF IC-176-6-MF IC-176-10-MF I |
Single Inline Memory Module (SIMM)
|
Yamaichi Electronics Co., Ltd.
|
